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WebFigure 2: TiN-etching performance of formulation 2 can be controlled by (a) hydrogen peroxide or (b) temperature. (c) TiN etch rate and pH vs. formulation 2 with di˜erent concentration of TiN. (d) Liquid particle count results for formulations 3 and 4. TiN etch rate WebMay 24, 2000 · An important step in the above process is the selective etching of the sputtered Cu bus layer and the TiWN/sub x/ barrier layer, in the presence-of the Pb-Sn solder. The Cu bus layer was selectively etched using commercial etchants. However, no commercial etchants were available for selectively etching the TiWN/sub x/ layer. hrs 651c-4
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WebOct 14, 2013 · The reactive ion etching of TiWN, which is used as a gate metal on gallium-arsenide device wafers, was studied in a parallel-plate, single-wafer plasma reactor … WebJun 29, 2011 · The grain and twin boundaries have been nearly fully covered by the carbide that precipitated in the post-welding heat treatment. Besides the intergranular carbide there is some intragranular carbide. Vilella’s reagent outlined the sigma in the weldment, Figure 5, and the phase boundaries are sharper than for the delta ferrite, Figure 3 a. WebDec 1, 2012 · Titanium nitride (TiN) is widely used as a hard mask film protecting the inter-level dielectric (ILD) before metal or plating seed layer deposition steps. It is common practice to use a wet etch... hobbes electric